2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . 1n522 1 .. . 1n528 1 silico n plana r zene r diode s telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n plana r zene r diode s standar d zene r voltag e toleranc e i s 20% . ad d suffix "a " fo r 10 % toleranc e an d suffi x "b " fo r 5 % tolerance . othe r tolerance , no n standar d an d highe r zene r voltage s upo n request . max . 1.9 0 cathod e mar k max . 0.52 0 glas s cas e jede c do-3 5 dimension s i n m m absolut e maximu m rating s (t, = 2 5 c ) zene r curren t se e tabl e " characteristic s " powe r dissipatio n a t t ^ = 7 5 c junctio n temperatur e storag e temperatur e rang e symbo l p ? t , t sl s valu e 500 " 20 0 -6 5 t o + 20 0 uni t m w c c " vali d provide d tha t lead s a t a distanc e o f 8 m m fro m cas e ar e kep t a t ambien t temperature . characteristic s a t t = 2 5 c therma l resistanc e junctio n t o ambien t ai r forwar d voltag e a t i f = 200m a symbo l r ? v f min . - - ty p ? - ma x 0.3 " 1. 1 uni t k/m w v " vali d provide d tha t lead s a t a distanc e o f 8 m m fro m cas e ar e kep t a t ambien t temperature . m j / \ s?mi-t' i induclor t ?w?rv? i ih ? rig m l o thong * les l conditions , punmtk r limit s mi d p?ckog ? uirncmio m ?i(hot ? notic e inftumalkw i lunnihw l b y n l semi-tunjuttor a h btlwve d t o t x hiil h ikvurnt o nm l rdijfc h i l lh ? lim e o f guin y i. > press v howeve r m ?ivin i 1 1 .ikliwi'ir t iv.iiiik i in i fe^pl.||^ibili^ y kit m y ern' n n r omiunu m jiwuvcrn l i n il l us e n i s typ e 1n522 1 1n522 2 1n522 3 1n522 4 1n522 5 1n522 6 1ns22 7 1n522 8 1n522 9 1n523 0 1n523 1 1n523 2 1ns23 3 1n523 4 1n523 5 1n523 6 1n523 7 1n523 8 1n523 9 1n524 0 1n524 1 1n524 2 1n524 3 1n524 4 1n524 5 1n524 6 1n524 7 1n524 8 1n524 9 1n52s o 1n525 1 1n525 2 1n525 3 1ns25 4 1n52s s 1n525 6 1ns25 7 1n525 8 1n52s 9 1ns26 0 1n526 1 1n526 2 1n526 3 1n526 4 1n526 s 1ns26 6 1n526 7 1n526 8 1n526 9 1n527 0 1n527 1 1n527 2 1n527 3 1n527 4 1n527 5 1n527 6 1n527 7 1n527 8 1n527 9 1n528 0 1n528 1 zene r voltag e range " v zno .3 , v 2. 4 2. 5 2. 7 2. 8 3. 0 3. 3 3. 6 3. 9 4. 3 4. 7 5. 1 5. 6 6. 0 6. 2 6. 8 7. 5 8. 2 8. 7 9. 1 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 2 2 4 2 5 2 7 2 8 3 0 3 3 3 6 3 9 4 3 ? 4 7 5 1 5 6 6 0 6 2 6 8 7 5 8 2 8 7 9 1 10 0 11 0 12 0 13 0 14 0 15 0 16 0 17 0 18 0 19 0 20 0 iz t m a 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 2 0 9. 5 9. 0 8. 5 7. 8 7. 4 7. 0 6. 6 6. 2 ... . _ 5. 6 5. 2 5. 0 .4. 6 4. 5 4. 2 3. 8 3. 4 3. 2 3. 0 2. 7 2. 5 2. 2 2. 1 2. 0 1. 8 1. 7 1. 5 1. 4 1. 4 1. 3 1, 2 1. 0 0.9 5 0.9 0 0.8 5 0.8 0 0.7 4 0.6 8 0.6 6 0.6 5 maximu m zene r impedanc e " r , t n <3 0 <3 0 <3 0 <3 0 <2 9 <2 8 <2 4 <2 3 <2 2 <1 9 <1 7 <1 1 < 7 < 7 < 5 < 6 < 8 < 8 <1 0 <1 7 <2 2 <3 0 <1 3 <1 5 <1 6 <1 7 <1 9 <2 1 <2 3 <2 5 <2 9 <3 3 <3 5 <4 1 <4 4 <4 9 <5 8 <7 0 <8 0 <9 3 <10 5 <12 5 <15 0 <17 0 <18 5 <23 0 <27 0 <33 0 <37 0 <40 0 <50 0 <70 0 <95 0 <110 0 <130 0 <150 0 <170 0 <190 0 <220 0 <240 0 <250 0 r z) k n <120 0 <125 0 <130 0 <140 0 <160 0 <160 0 <170 0 <190 0 <200 0 <190 0 <160 0 <160 0 <160 0 <100 0 <75 0 <50 0 <50 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <60 0 <70 0 <70 0 |